JPH0420256B2 - - Google Patents

Info

Publication number
JPH0420256B2
JPH0420256B2 JP56047471A JP4747181A JPH0420256B2 JP H0420256 B2 JPH0420256 B2 JP H0420256B2 JP 56047471 A JP56047471 A JP 56047471A JP 4747181 A JP4747181 A JP 4747181A JP H0420256 B2 JPH0420256 B2 JP H0420256B2
Authority
JP
Japan
Prior art keywords
film
emitter
electrode window
sio
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56047471A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162460A (en
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047471A priority Critical patent/JPS57162460A/ja
Publication of JPS57162460A publication Critical patent/JPS57162460A/ja
Publication of JPH0420256B2 publication Critical patent/JPH0420256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP56047471A 1981-03-31 1981-03-31 Manufacture of semiconductor device Granted JPS57162460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047471A JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047471A JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162460A JPS57162460A (en) 1982-10-06
JPH0420256B2 true JPH0420256B2 (en]) 1992-04-02

Family

ID=12776052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047471A Granted JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162460A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609163A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd 半導体装置の製造方法
JPS60119775A (ja) * 1983-12-02 1985-06-27 Hitachi Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929136B2 (ja) * 1976-03-30 1984-07-18 株式会社東芝 半導体装置の製造方法
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
CA1153830A (en) * 1980-03-24 1983-09-13 Allen P. Ho Polysilicon-base self-aligned bipolar transistor process and structure

Also Published As

Publication number Publication date
JPS57162460A (en) 1982-10-06

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